发明授权
- 专利标题： Photogalvanic cell having a charge storage layer with varying performance characteristics
- 专利标题（中）： 具有具有不同性能特征的电荷存储层的光电池
-
申请号： US706079申请日： 1976-07-16
-
公开(公告)号： US4084043A公开(公告)日： 1978-04-11
- 发明人: Horst Witzke , Satyendra Kumar Deb
- 申请人： Horst Witzke , Satyendra Kumar Deb
- 申请人地址： NJ Princeton NY Bethpage
- 专利权人： Optel Corporation,Grumman Aerospace Corporation
- 当前专利权人： Optel Corporation,Grumman Aerospace Corporation
- 当前专利权人地址： NJ Princeton NY Bethpage
- 主分类号： H01G9/20
- IPC分类号： H01G9/20 ; H01M14/00 ; H01M6/30 ; H01M6/36
摘要：
A charge storing photogalvanic cell including spaced electrode and counterelectrode "sandwiching" a charge storage layer and a compensating layer. Various dopants to the charge storage layer have been determined to vary cell performance as follows: increasing photosensitivity and charge retention; increasing electrical response; increasing device life; decreasing charge retention; changing optical absorption of charge storage layer; or localizing destruction of charge storage capability.
公开/授权文献
信息查询
