发明授权
US4117210A Photogalvanic cell having transparent photoactive TIO.sub.2 thin film
失效
具有透明感光TIO“2”薄膜的光电池
- 专利标题： Photogalvanic cell having transparent photoactive TIO.sub.2 thin film
- 专利标题（中）： 具有透明感光TIO“2”薄膜的光电池
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申请号： US763072申请日： 1977-01-27
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公开(公告)号： US4117210A公开(公告)日： 1978-09-26
- 发明人: Satyendra K. Deb , Schoen-nan Chen , Horst Witzke , Michael A. Russak , Joseph Reichman
- 申请人： Satyendra K. Deb , Schoen-nan Chen , Horst Witzke , Michael A. Russak , Joseph Reichman
- 申请人地址： NJ Princeton NY Bethpage
- 专利权人： Optel Corporation,Grumman Aerospace Corporation
- 当前专利权人： Optel Corporation,Grumman Aerospace Corporation
- 当前专利权人地址： NJ Princeton NY Bethpage
- 主分类号： H01G9/20
- IPC分类号： H01G9/20 ; H01M14/00 ; H01M6/30 ; H01M6/36
摘要：
A photogalvanic cell includes a conducting SnO.sub.2 electrode upon which is deposited a semi-transparent film of Ti. A metal oxide thin film, such as TiO.sub.2 is in turn deposited upon the semi-transparent Ti thin film. An aqueous (acid or base) electrolyte contacts the metal oxide thin film to form a photoactive site for converting light to electrical energy. The semi-transparent film reduces the internal resistance of the cell by assisting charge transfer between the metal oxide film and the electrode. Also, use of a semi-transparent film permits bi-directional irradiation of the cell to increase photoconversion efficiency.
公开/授权文献
- USD335806S Multipurpose tool 公开/授权日：1993-05-25
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