发明授权
US4131903A Capacitor dielectric with inner blocking layers and method for producing
the same
失效
具有内部阻挡层的电容器电介质及其制造方法
- 专利标题： Capacitor dielectric with inner blocking layers and method for producing the same
- 专利标题（中）： 具有内部阻挡层的电容器电介质及其制造方法
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申请号： US815579申请日： 1977-07-14
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公开(公告)号： US4131903A公开(公告)日： 1978-12-26
- 发明人: Helmut Schmelz , Werner Schwaen
- 申请人： Helmut Schmelz , Werner Schwaen
- 申请人地址： DE Berlin & Munich
- 专利权人： Siemens Aktiengesellschaft
- 当前专利权人： Siemens Aktiengesellschaft
- 当前专利权人地址： DE Berlin & Munich
- 主分类号： H01G4/12
- IPC分类号： H01G4/12
摘要：
A capacitor dielectric with inner blocking layers is disclosed wherein the portion of copper located in intermediate layers between the crystallites is enriched toward the crystallite surfaces. The dielectric is produced by a heating speed of 200 to 800.degree. C/h towards a sinter temperature, and a cooling-off speed of 10 to 100.degree. C/h to about 350.degree. C below the sinter temperature.
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