An improved photoconductor for GaAs laser addressed devices sensitive to illumination at about 1.5 eV is an amorphous material containing silicon, hydrogen and a material taken from the group consisting of Ge, Sn and Pb. A preferred embodiment of this invention is amorphous Si.sub.x Ge.sub.1-x H.sub.y where x equals 0.78 to 0.93 and y equals 14-20 atomic percent.