发明授权
- 专利标题： Polycrystalline varistors with reduced overshoot
- 专利标题（中）： 多晶压敏电阻具有减小的过冲
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申请号： US843793申请日： 1977-10-20
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公开(公告)号： US4157527A公开(公告)日： 1979-06-05
- 发明人: Herbert R. Philipp
- 申请人： Herbert R. Philipp
- 申请人地址： NY Schenectady
- 专利权人： General Electric Company
- 当前专利权人： General Electric Company
- 当前专利权人地址： NY Schenectady
- 主分类号： H01C7/102
- IPC分类号： H01C7/102 ; H01C7/10
摘要：
A metal oxide varistor structure having a reduced voltage overshoot is disclosed. In accordance with one embodiment of the invention, the varistor disk, for example, is provided with a relatively small region of reduced thickness, the amount of said thickness reduction being dependent upon the original thickness of the varistor substrate. The area of region of reduced thickness is selected to control conduction duration in the region of reduced thickness.
公开/授权文献
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