发明授权
- 专利标题： Annealing synthetic diamond type Ib
- 专利标题（中）： 退火人造金刚石Ib型
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申请号： US860283申请日： 1977-12-14
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公开(公告)号： US4174380A公开(公告)日： 1979-11-13
- 发明人: Herbert M. Strong , Richard M. Chrenko , Roy E. Tuft
- 申请人： Herbert M. Strong , Richard M. Chrenko , Roy E. Tuft
- 申请人地址： NY Schenectady
- 专利权人： General Electric Company
- 当前专利权人： General Electric Company
- 当前专利权人地址： NY Schenectady
- 主分类号： B01J3/06
- IPC分类号： B01J3/06 ; C09K3/14 ; C30B33/00 ; C01B31/06
摘要：
Type Ib synthetic diamond crystal is annealed at an annealing temperature ranging from about 1500.degree. C. to about 2200.degree. C. under a pressure which prevents significant graphitization of the diamond during the annealing to convert at least about 20% of the total amount of type Ib nitrogen present in the crystal to type Ia nitrogen.
公开/授权文献
- US5950119A Image-reject mixers 公开/授权日：1999-09-07
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