发明授权
US4192840A Method for producing a capacitor dielectric with inner blocking layers
失效
用于制造具有内部阻挡层的电容器电介质的方法
- 专利标题： Method for producing a capacitor dielectric with inner blocking layers
- 专利标题（中）： 用于制造具有内部阻挡层的电容器电介质的方法
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申请号： US908665申请日： 1978-05-23
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公开(公告)号： US4192840A公开(公告)日： 1980-03-11
- 发明人: Helmut Schmelz , Werner Schwaen
- 申请人： Helmut Schmelz , Werner Schwaen
- 申请人地址： DEX Berlin & Munich
- 专利权人： Siemens Aktiengesellschaft
- 当前专利权人： Siemens Aktiengesellschaft
- 当前专利权人地址： DEX Berlin & Munich
- 优先权： DEX2634896 19760803
- 主分类号： H01B3/12
- IPC分类号： H01B3/12 ; H01G4/12 ; C04B19/04
摘要：
A capacitor dielectric with inner blocking layers is disclosed wherein the portion of copper located in intermediate layers between the crystallites is enriched toward the crystallite surfaces. The dielectric is produced by a heating speed of 200.degree. to 800.degree. C./h towards a sinter temperature, and a cooling-off speed of 10.degree. to 100.degree. C./h to about 350.degree. C. below the sinter temperature.