发明授权
- 专利标题: Gate turn-off thyristor
- 专利标题(中): 门极关断晶闸管
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申请号: US711690申请日: 1976-08-04
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公开(公告)号: US4195306A公开(公告)日: 1980-03-25
- 发明人: Marius Fullmann , Friedhelm Sawitzki , Dieter Silber
- 申请人: Marius Fullmann , Friedhelm Sawitzki , Dieter Silber
- 申请人地址: DEX Frankfurt
- 专利权人: Licentia Patent-Verwaltungs-G.m.b.H.
- 当前专利权人: Licentia Patent-Verwaltungs-G.m.b.H.
- 当前专利权人地址: DEX Frankfurt
- 优先权: DEX2534703 19750804
- 主分类号: H02H7/12
- IPC分类号: H02H7/12 ; H01L29/74 ; H01L29/744 ; H02M1/06 ; H01L29/747
摘要:
A gate turn-off thyristor device including a gate turn-off main thyristor and a gate turn-off auxiliary thyristor, each having an emitter, a control base, a main base and a counter-emitter, integrated in a semiconductor body including three zones of alternatingly opposite conductivity type. The three zones of the semiconductor body are each divided into two regions to provide the counter-emitter, main base and control base zones of the two thyristors, while the emitter zones of the main thyristor and of the auxiliary thyristor are separate zones formed in the respective associated regions constituting the control base zones of the respective thyristors. The two counter-emitter zones of the two thyristors are commonly contacted, and the two regions of at least one of the zones of the semiconductor body are doped differently so that the turn-off gain of the main thyristor is greater than the turn-off gain of the auxiliary thyristor and the holding current of the auxiliary thyristor is smaller than the holding current of the main thyristor.
公开/授权文献
- US5126097A Fluid flow sensing and switching device 公开/授权日:1992-06-30