发明授权
- 专利标题: One-transistor storage element and a process for the production thereof
- 专利标题(中): 一晶体管存储元件及其制造方法
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申请号: US943066申请日: 1978-09-18
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公开(公告)号: US4208670A公开(公告)日: 1980-06-17
- 发明人: Kurt Hoffmann , Reiner Sigusch
- 申请人: Kurt Hoffmann , Reiner Sigusch
- 申请人地址: DEX Berlin & Munich
- 专利权人: Siemens Aktiengesellschaft
- 当前专利权人: Siemens Aktiengesellschaft
- 当前专利权人地址: DEX Berlin & Munich
- 优先权: DEX2743662 19770928
- 主分类号: H01L27/10
- IPC分类号: H01L27/10 ; G11C11/404 ; H01L21/8242 ; H01L27/108 ; H01L29/78
摘要:
A one-transistor storage element system and a method for producing the same is disclosed wherein each storage element has a sselector field effect transistor and a storage capacitor. A doped semiconductor layer is provided having an oppositely doped bit line provided at a surface thereof, an oppositely doped source zone connecting to the bit line by an oppositely doped connecting zone, and an oppositely doped drain zone also provided at a surface of the semiconductor layer. An insulating layer is provided over the surface of the semiconductor layer and an electrically conductive coating is provided thereon. A first separate part of the conductive coating forms a word line which is positioned over a gap between the source and drain zones. Portions of the word line form a gate beneath which a channel of the transistor is formed. A second separate part of the electrically conductive coating is formed over a portion of the semiconductor layer adjacent the drain zone and forms one of the electrodes of the storage capacitor. The other electrode of the storage capacitor is either provided as a diffusion zone in the semiconductor layer or may be an induced zone. A reference potential line formed by a connecting third part of the electrical conductive layer is also provided.
公开/授权文献
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