发明授权
- 专利标题: Directly heated cathode for electron tube
- 专利标题(中): 电子管直接加热阴极
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申请号: US25582申请日: 1979-03-30
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公开(公告)号: US4220891A公开(公告)日: 1980-09-02
- 发明人: Hisashi Ando , Ko Soeno , Hiroshi Sakamoto , Testuo Oyama , Takao Kawamura , Hiroshi Fukushima
- 申请人: Hisashi Ando , Ko Soeno , Hiroshi Sakamoto , Testuo Oyama , Takao Kawamura , Hiroshi Fukushima
- 申请人地址: JPX
- 专利权人: Hitachi, Ltd.
- 当前专利权人: Hitachi, Ltd.
- 当前专利权人地址: JPX
- 优先权: JPX53-39202 19780405
- 主分类号: H01J1/14
- IPC分类号: H01J1/14 ; H01J1/15 ; H01J29/04 ; H01J19/06
摘要:
A directly heated cathode for electron tube having a stable electron emission characteristic and a low cut-off voltage is provided. The cathode comprises a base metal of an alloy consisting essentially of 20-30% by weight of tungsten and a trace amount to 0.25% by weight of zirconium, the balance being nickel, binder dots of metallic nickel powders distributed on a flat part at the front side of the base metal, and a layer of thermoelectron emission oxides laid on the flat part at the front side of the base metal. The layer of thermoelectron emission oxides is in direct contact with the flat part through clearances among the binder dots of the metallic nickel powders.
公开/授权文献
- US6153445A Method of manufacturing semiconductor device 公开/授权日:2000-11-28