Wafer scale enhanced gain electron bombarded CMOS imager

    公开(公告)号:US11810747B2

    公开(公告)日:2023-11-07

    申请号:US17377065

    申请日:2021-07-15

    IPC分类号: H01J31/26 H01J29/04 H01J29/08

    摘要: An apparatus, system and method is provided for producing stacked wafers containing an array of image intensifiers that can be evacuated on a wafer scale. The wafer scale fabrication techniques, including bonding, evacuation, and compression sealing concurrently forms a plurality of EBCMOS imager anodes with design elements that enable high voltage operation with optional enhancement of additional gain via TMSE amplification. The TMSE amplification is preferably one or more multiplication semiconductor wafers of an array of EBD die placed between a photocathode within a photocathode wafer and an imager anode that is preferably an EBCMOS imager anode bonded to or integrated within an interconnect die within an interconnect wafer.

    Radial radio frequency (RF) electron guns

    公开(公告)号:US10854417B1

    公开(公告)日:2020-12-01

    申请号:US16171458

    申请日:2018-10-26

    IPC分类号: H01J31/06 H01J29/48 H01J29/04

    摘要: Radial radio frequency (RF) electron guns and radial RF electron gun systems are provided that are capable of generating an electron beam that can propagate either radially inward, towards the axis of a cylinder, or radially outward from the axis. A beam source capable of generating a radially inwardly propagating electron beam, while perhaps not particularly useful as a source for a higher-energy accelerator, offers potential advantages for materials processing, as the geometry allows irradiation from all sides of an enclosed material flow with a single structure. Other potential applications include, but are not limited to, atmospheric plasma generation, radiation damage testing, and possibly, novel electron lens-type devices for hadron accelerators.