发明授权
- 专利标题: Method for vapor depositing a cerium oxide film
- 专利标题(中): 气相沉积氧化铈膜的方法
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申请号: US910344申请日: 1978-05-30
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公开(公告)号: US4242373A公开(公告)日: 1980-12-30
- 发明人: Kiyoshi Watanabe , Kazuo Sunahara , Tsutomu Fujita
- 申请人: Kiyoshi Watanabe , Kazuo Sunahara , Tsutomu Fujita
- 申请人地址: JPX
- 专利权人: Hitachi, Ltd.
- 当前专利权人: Hitachi, Ltd.
- 当前专利权人地址: JPX
- 优先权: JPX51/17080 19760220; JPX51/17081 19760220; DEX2706896 19770217; FRX7704857 19770218; NLX7701757 19770218; GBX6971/77 19770218
- 主分类号: C23C14/08
- IPC分类号: C23C14/08 ; B05D1/00 ; H01J31/26
摘要:
A method for forming a thin film of cerium oxide as a blocking layer which constitutes a portion of a photoelectric film of a blocking type image pickup tube is disclosed. A substrate deposition rate in a vacuum deposition process is established in a range between 0.01 to 0.6 A/sec to prevent the deposition of particles which result in black or white spots in a picture image. It is more effective to select a particle size of 5 .mu. or more for the primary particles to be deposited.
公开/授权文献
- US5840831A Cured silicone powder and method of preparation 公开/授权日:1998-11-24
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