发明授权
- 专利标题: Passivated thin-film hybrid circuits
- 专利标题(中): 钝化薄膜混合电路
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申请号: US110562申请日: 1980-01-09
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公开(公告)号: US4288776A公开(公告)日: 1981-09-08
- 发明人: Robert E. Holmes
- 申请人: Robert E. Holmes
- 申请人地址: OR Beaverton
- 专利权人: Tektronix, Inc.
- 当前专利权人: Tektronix, Inc.
- 当前专利权人地址: OR Beaverton
- 主分类号: H01C17/242
- IPC分类号: H01C17/242 ; H01C1/034 ; H01C7/00 ; H01C17/26 ; H01L27/01 ; B05D3/06
摘要:
Thin-film microcircuit structures passivated with silicon nitride are provided in which included electrical components containing nickel, chromium or other nitride-forming metals are encapsulated in an oxide material, preferably silicon oxide. The metal-containing components are thus prevented from reacting with the silicon nitride passivation coating during through-passivation laser trimming of the components.
公开/授权文献
- USD431387S Seat 公开/授权日:2000-10-03
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