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US4288776A Passivated thin-film hybrid circuits 失效
钝化薄膜混合电路

Passivated thin-film hybrid circuits
摘要:
Thin-film microcircuit structures passivated with silicon nitride are provided in which included electrical components containing nickel, chromium or other nitride-forming metals are encapsulated in an oxide material, preferably silicon oxide. The metal-containing components are thus prevented from reacting with the silicon nitride passivation coating during through-passivation laser trimming of the components.
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