发明授权
- 专利标题: Radiant energy activated semiconductor switch
- 专利标题(中): 辐射能激活半导体开关
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申请号: US46568申请日: 1979-06-07
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公开(公告)号: US4295058A公开(公告)日: 1981-10-13
- 发明人: Robert W. Lade , Gordon B. Spellman , Stanley V. Jaskolski , Herman P. Schutten , James R. Jaeschke
- 申请人: Robert W. Lade , Gordon B. Spellman , Stanley V. Jaskolski , Herman P. Schutten , James R. Jaeschke
- 申请人地址: OH Cleveland
- 专利权人: Eaton Corporation
- 当前专利权人: Eaton Corporation
- 当前专利权人地址: OH Cleveland
- 主分类号: H03K17/13
- IPC分类号: H03K17/13 ; H03K17/79 ; H03K17/94 ; H03K17/72 ; H03K17/687
摘要:
Various circuits and combinations of radiant energy responsive transducer means such as photovoltaic diodes connected to the gate of a depletion mode FET whose source and drain are connected to the gate and cathode of a thyristor, are disclosed to provide a semiconductor switch which is triggered into conduction solely by a small amount of radiant energy, without the need for a second triggering energy source, and which also affords immunity to unwanted dv/dt and temperature induced turn-on. Various modes of operation are disclosed, including the thyristor self-triggering into conduction, and/or being of the light-activated type itself and being directly triggered by impinging light, and/or being triggered by the light-responsive diode bias, and/or being triggered by a small bias supplied from a second set of photovoltaic diodes connected to the thyristor gate. Other combinations are disclosed providing zero-cross firing.
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