发明授权
- 专利标题: Injection-type semiconductor laser
- 专利标题(中): 注射型半导体激光器
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申请号: US83043申请日: 1979-10-09
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公开(公告)号: US4297652A公开(公告)日: 1981-10-27
- 发明人: Izuo Hayashi , Hiroo Yonezu
- 申请人: Izuo Hayashi , Hiroo Yonezu
- 申请人地址: JPX Tokyo
- 专利权人: Nippon Electric Co., Ltd.
- 当前专利权人: Nippon Electric Co., Ltd.
- 当前专利权人地址: JPX Tokyo
- 优先权: JPX53-125585 19781011
- 主分类号: H01S5/00
- IPC分类号: H01S5/00 ; H01S5/16 ; H01S3/19
摘要:
A semiconductor laser having a double heterostructure configuration is provided with a light waveguide layer extending between a pair of mirrors. A thin active layer is disposed adjacent to the waveguide layer, and is formed in the shape of a stripe having a width of approximately 5 .mu.m. The stripe is shorter in axial length than the waveguide, such that the ends of the stripe are spaced from the mirrors by a distance of 30 to 60 .mu.m.
公开/授权文献
- USD402594S Toddler taxi sled 公开/授权日:1998-12-15
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