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US4297652A Injection-type semiconductor laser 失效
注射型半导体激光器

Injection-type semiconductor laser
摘要:
A semiconductor laser having a double heterostructure configuration is provided with a light waveguide layer extending between a pair of mirrors. A thin active layer is disposed adjacent to the waveguide layer, and is formed in the shape of a stripe having a width of approximately 5 .mu.m. The stripe is shorter in axial length than the waveguide, such that the ends of the stripe are spaced from the mirrors by a distance of 30 to 60 .mu.m.
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