公开(公告)号：US12191634B2

公开(公告)日：2025-01-07

申请号：US17487405

申请日：2021-09-28

Applicant: Nuvoton Technology Corporation Japan

Inventor： Kazuya Yamada ,  Tougo Nakatani ,  Hiroki Nagai ,  Masayuki Hata

IPC: H01S5/16 ,  H01S5/32 ,  H01S5/20 ,  H01S5/34

Abstract: A semiconductor laser element includes: a first conductivity-type cladding layer; a first guide layer disposed above the first conductivity-type cladding layer; an active layer disposed above the first guide layer; and a second conductivity-type cladding layer disposed above the active layer. A window region is formed in a region of the active layer including part of at least one of the front-side end face or the rear-side end face, the first conductivity-type cladding layer consists of (AlxGa1-x)0.5In0.5P, the first guide layer consists of (AlyGa1-y)0.5In0.5P, and the second conductivity-type cladding layer consists of (AlzGa1-z)0.5In0.5P, where x, y, and z each denote an Al composition ratio, 0 0.03 is satisfied, where L denotes a length of the resonator and D denotes a length of the window region in the first direction.

公开(公告)号：US12119613B2

公开(公告)日：2024-10-15

申请号：US16985916

申请日：2020-08-05

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Atsushi Sugiyama ,  Akio Ito ,  Tadataka Edamura

IPC: H01S5/028 ,  G02B1/113 ,  H01S5/16 ,  H01S5/34 ,  H01S5/12 ,  H01S5/22

CPC classification number: H01S5/0287 ,  G02B1/113 ,  H01S5/166 ,  H01S5/3402 ,  H01S5/12 ,  H01S5/22

Abstract: A sintered body of the present invention includes cerium oxide and cerium fluoride or yttrium fluoride.

公开(公告)号：US12107393B2

公开(公告)日：2024-10-01

申请号：US18486776

申请日：2023-10-13

Applicant: Nuvoton Technology Corporation Japan

Inventor： Kazumasa Nagano ,  Hiroki Nagai

IPC: H01S5/00 ,  H01S5/02 ,  H01S5/026 ,  H01S5/16 ,  H01S5/343 ,  H01S5/22 ,  H01S5/32

CPC classification number: H01S5/162 ,  H01S5/0021 ,  H01S5/0207 ,  H01S5/026 ,  H01S5/3434 ,  H01S5/0014 ,  H01S5/22 ,  H01S5/3202

Abstract: A semiconductor laser element that includes a semiconductor layer including a waveguide formed in an intra-layer direction of the semiconductor layer and a window region formed in a front-side end face of the waveguide, has a current-laser optical output characteristic in which, at an operating temperature of 25° C.±3° C., a laser optical output has a maximum value at a first driving current value and the laser optical output is at most 20% of the maximum value at a second driving current value greater than the first driving current value, and is not damaged at the second driving current value.

公开(公告)号：US20220013989A1

公开(公告)日：2022-01-13

申请号：US17291859

申请日：2019-10-31

Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION

Inventor： KOTA TOKUDA ,  SHINYA SATOU

IPC: H01S5/223 ,  H01S5/343 ,  H01S5/16

Abstract: A semiconductor laser according to an embodiment of the present disclosure includes a semiconductor stack section. The semiconductor stack section includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, in which the second semiconductor layer is stacked on the first semiconductor layer and includes a ridge having a band shape, and an active layer. The semiconductor stack section further has an impurity region that is at least a portion of a region not facing the ridge and that is located at a position deeper than at least the active layer, in which the impurity region has an impurity concentration of the second conductivity type higher than an impurity concentration of the second conductivity type in a region, of the second semiconductor layer, facing the ridge.

公开(公告)号：US11038320B2

公开(公告)日：2021-06-15

申请号：US16423820

申请日：2019-05-28

Applicant: Lumentum Operations LLC

Inventor： Li Fan

IPC: H01S5/16 ,  H01S5/34 ,  H01S5/323 ,  H01S5/343

Abstract: A semiconductor layer structure may include a substrate, a buffer layer formed on the substrate, and a set of epitaxial layers formed on the buffer layer. The buffer layer may have a thickness that is greater than 2 micrometers (μm). The set of epitaxial layers may include a quantum well layer. A quantum well intermixing region may be formed in association with the quantum well layer and a material diffused from a region of a surface of the semiconductor layer structure.

公开(公告)号：US10998695B2

公开(公告)日：2021-05-04

申请号：US16237323

申请日：2018-12-31

Applicant: SHARP KABUSHIKI KAISHA

Inventor： Toshiyuki Kawakami ,  Masayuki Ohta ,  Ryota Kawamura

IPC: H01S5/028 ,  H01S5/10 ,  H01S5/22 ,  H01S5/24 ,  H01S5/042 ,  H01S5/40 ,  H01S5/02 ,  H01S5/02216 ,  H01S5/16 ,  H01S5/02253

Abstract: A semiconductor laser device includes an optical waveguide that extends toward a first end of the semiconductor laser device. The optical waveguide includes a first clad layer, an active layer, a second clad layer, and an electrode layer in this order. A reflecting surface, which has a dielectric film and a metal film in this order from the active layer, crosses the active layer at a second end of the optical waveguide.

公开(公告)号：US10312667B2

公开(公告)日：2019-06-04

申请号：US15834753

申请日：2017-12-07

Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.

Inventor： Jun-ichi Hashimoto

IPC: H01S5/02 ,  H01S5/12 ,  H01S5/16 ,  H01S5/22 ,  H01S5/34 ,  B82Y20/00 ,  H01S5/028 ,  H01S5/227

Abstract: A quantum cascade laser includes a laser structure including first and second end faces, the laser structure including a semiconductor laminate region and a first embedding semiconductor region. The laser structure includes first and second regions arranged in a direction of a first axis extending from the first to second end faces. Each of the first and second regions includes the semiconductor laminate region. The semiconductor laminate region of the first region has a first recess. The semiconductor laminate region of the second region has a semiconductor mesa. The first recess and the semiconductor mesa extend in the direction of the first axis, and are aligned with each other. The semiconductor mesa has an end face extending in a direction of a second axis intersecting the first axis. The first embedding semiconductor region is disposed in the first recess so as to embed the end face of the semiconductor mesa.

公开(公告)号：US20190131770A1

公开(公告)日：2019-05-02

申请号：US16234344

申请日：2018-12-27

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Norio IKEDO ,  Tougo NAKATANI ,  Takahiro OKAGUCHI ,  Takeshi YOKOYAMA ,  Tomohito YABUSHITA ,  Toru TAKAYAMA

IPC: H01S5/16 ,  H01S5/20 ,  H01S5/042 ,  H01S5/343 ,  B23K26/21

Abstract: A semiconductor laser device includes: a first conductivity side semiconductor layer, an active layer; and a second conductivity side semiconductor layer. The second conductivity side semiconductor layer includes a first semiconductor layer and a second semiconductor layer, the first semiconductor layer being closer to the active layer than the second semiconductor layer is. The second semiconductor layer defines a width of a current injection region for injecting current into an optical waveguide. The current injection region includes a width varying region in which a width varies. S1>S2, where S1 denotes a width of the width varying region on a front end face side, and S2 denotes a width of the width varying region on a rear end face side.

公开(公告)号：US10103518B2

公开(公告)日：2018-10-16

申请号：US14296180

申请日：2014-06-04

Applicant: MACOM Technology Solutions Holdings, Inc.

Inventor： Alex A. Behfar

IPC: H01S5/028 ,  H01S5/323 ,  H01S5/22 ,  G02F1/17 ,  H01S5/02 ,  H01S5/16 ,  H01S5/00

Abstract: Semiconductor photonic device surfaces are covered with a dielectric or a metal protective layer. The protective layer covers the entire device, including regions near facets at active regions, to prevent bare or unprotected semiconductor regions, thereby to form a very high reliability etched facet photonic device.

公开(公告)号：US10103517B2

公开(公告)日：2018-10-16

申请号：US14296162

申请日：2014-06-04

Applicant: MACOM Technology Solutions Holdings, Inc.

Inventor： Alex A. Behfar

IPC: H01S5/028 ,  H01S5/323 ,  H01S5/22 ,  G02F1/17 ,  H01S5/02 ,  H01S5/16 ,  H01S5/00

Abstract: Semiconductor photonic device surfaces are covered with a dielectric or a metal protective layer. The protective layer covers the entire device, including regions near facets at active regions, to prevent bare or unprotected semiconductor regions, thereby to form a very high reliability etched facet photonic device.