发明授权
- 专利标题： Method of forming nondefective zone in silicon single crystal wafer by two stage-heat treatment
- 专利标题（中）： 通过两级热处理在硅单晶晶片中形成无损区的方法
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申请号： US110456申请日： 1980-01-08
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公开(公告)号： US4314595A公开(公告)日： 1982-02-09
- 发明人: Kazuhiko Yamamoto , Yoshiaki Matsushita , Masaru Kanamori , Kazutoshi Nagasawa , Naotsugu Yoshihiro , Seigo Kishino
- 申请人： Kazuhiko Yamamoto , Yoshiaki Matsushita , Masaru Kanamori , Kazutoshi Nagasawa , Naotsugu Yoshihiro , Seigo Kishino
- 申请人地址： JPX
- 专利权人： VLSI Technology Research Association
- 当前专利权人： VLSI Technology Research Association
- 当前专利权人地址： JPX
- 优先权： JPX54-4929 19790119
- 主分类号： H01L21/66
- IPC分类号： H01L21/66 ; H01L21/322 ; H01L7/52
摘要：
A silicon single crystal wafer is subjected to two-stage heat treatment. In the first-stage it is heated at a temperature within the range of between 500.degree. C. and 1,000.degree. C. Subsequently the thus heated wafer is heated at a temperature higher than that at the first stage. Thus, a nondefective zone is formed in the surface region of the wafer, and the interior zone of the wafer becomes rich in micro defects capable of gettering impurities such as heavy metals.
公开/授权文献
- USD430811S Cutting guide 公开/授权日：2000-09-12
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