公开(公告)号：US4314595A

公开(公告)日：1982-02-09

申请号：US110456

申请日：1980-01-08

申请人： Kazuhiko Yamamoto ,  Yoshiaki Matsushita ,  Masaru Kanamori ,  Kazutoshi Nagasawa ,  Naotsugu Yoshihiro ,  Seigo Kishino

发明人： Kazuhiko Yamamoto ,  Yoshiaki Matsushita ,  Masaru Kanamori ,  Kazutoshi Nagasawa ,  Naotsugu Yoshihiro ,  Seigo Kishino

IPC分类号： H01L21/66 ,  H01L21/322 ,  H01L7/52

CPC分类号： H01L21/3225 ,  Y10S148/024

摘要： A silicon single crystal wafer is subjected to two-stage heat treatment. In the first-stage it is heated at a temperature within the range of between 500.degree. C. and 1,000.degree. C. Subsequently the thus heated wafer is heated at a temperature higher than that at the first stage. Thus, a nondefective zone is formed in the surface region of the wafer, and the interior zone of the wafer becomes rich in micro defects capable of gettering impurities such as heavy metals.

摘要翻译： 将硅单晶晶片进行两级热处理。 在第一阶段中，在500℃至1000℃的温度范围内加热。随后将这样加热的晶片在高于第一阶段的温度下加热。 因此，在晶片的表面区域形成非缺陷区，并且晶片的内部区域变得富含能够吸收诸如重金属的杂质的微缺陷。

公开(公告)号：US4376657A

公开(公告)日：1983-03-15

申请号：US213400

申请日：1980-12-05

申请人： Kazutoshi Nagasawa ,  Seigo Kishino ,  Yoshiaki Matsushita ,  Masaru Kanamori

发明人： Kazutoshi Nagasawa ,  Seigo Kishino ,  Yoshiaki Matsushita ,  Masaru Kanamori

IPC分类号： H01L21/322 ,  H01L7/52 ,  H01L21/263

CPC分类号： H01L21/3225 ,  Y10S148/128

摘要： In a gettering method for processing semiconductor wafers a semiconductor wafer such as a silicon wafer is first annealed in a non-oxidizing atmosphere, for example, in a nitrogen atmosphere, at a temperature in the range of 950.degree. to 1,300.degree. C., preferably at 1,050.degree. C., for more than 10 minutes, for example for four (4) hours, to diffuse out oxygen near the surfaces of the semiconductor wafer. Then the semiconductor wafer is annealed at a temperature in the range of 600.degree. to 800.degree. C., for example at 650.degree. C., for more than one hour, preferably for 16 hours, to create in the interior of the semiconductor wafer microdefects of high density.

摘要翻译： 在用于处理半导体晶片的吸气方法中，首先在非氧化性气氛中，例如在氮气气氛中，在950〜1300℃的温度范围内退火诸如硅晶片的半导体晶片，优选地 在1050℃下超过10分钟，例如四（4）小时，以在半导体晶片的表面附近扩散出氧。 然后将半导体晶片在600℃至800℃的温度范围内，例如在650℃下退火超过1小时，优选16小时，以在半导体晶片的内部形成微缺陷 的高密度。