发明授权
US4318014A Selective precharge circuit for read-only-memory 失效
只读存储器的选择性预充电电路

Selective precharge circuit for read-only-memory
摘要:
A read-only-memory circuit is disclosed which includes a plurality of column conductors and circuitry for selecting one of the plurality of column conductors in response to an input address. The selection circuitry couples each of the column conductors to a common node which is coupled to a precharge circuit such that only the selected column conductor is precharged. The precharged circuit includes first and second diode-connected IGFET devices coupled in series such that the first IGFET device is a standard enhancement mode transistor which includes an implanted channel while the second IGFET device is a natural transistor which does not include an implanted channel.
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