发明授权
- 专利标题: Selective precharge circuit for read-only-memory
- 专利标题(中): 只读存储器的选择性预充电电路
-
申请号: US61334申请日: 1979-07-27
-
公开(公告)号: US4318014A公开(公告)日: 1982-03-02
- 发明人: Doyle V. McAlister , James R. Pfiester
- 申请人: Doyle V. McAlister , James R. Pfiester
- 申请人地址: IL Schaumburg
- 专利权人: Motorola, Inc.
- 当前专利权人: Motorola, Inc.
- 当前专利权人地址: IL Schaumburg
- 主分类号: G11C17/12
- IPC分类号: G11C17/12 ; G11C17/14 ; H03K19/096 ; G11C8/02
摘要:
A read-only-memory circuit is disclosed which includes a plurality of column conductors and circuitry for selecting one of the plurality of column conductors in response to an input address. The selection circuitry couples each of the column conductors to a common node which is coupled to a precharge circuit such that only the selected column conductor is precharged. The precharged circuit includes first and second diode-connected IGFET devices coupled in series such that the first IGFET device is a standard enhancement mode transistor which includes an implanted channel while the second IGFET device is a natural transistor which does not include an implanted channel.
公开/授权文献
- USD392821S Bench support base 公开/授权日:1998-03-31
信息查询