发明授权
US4346163A Resist for use in forming a positive pattern with a radiation and
process for forming a positive pattern with radiation
失效
抵抗用于形成具有辐射的正型图案和用于用辐射形成正图案的工艺
- 专利标题： Resist for use in forming a positive pattern with a radiation and process for forming a positive pattern with radiation
- 专利标题（中）： 抵抗用于形成具有辐射的正型图案和用于用辐射形成正图案的工艺
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申请号： US188773申请日： 1980-09-22
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公开(公告)号： US4346163A公开(公告)日： 1982-08-24
- 发明人: Kenichi Takeyama , Takayoshi Morimoto , Kunio Hibino
- 申请人： Kenichi Takeyama , Takayoshi Morimoto , Kunio Hibino
- 申请人地址： JPX Osaka
- 专利权人： Matsushita Electric Industrial Co. Ltd.
- 当前专利权人： Matsushita Electric Industrial Co. Ltd.
- 当前专利权人地址： JPX Osaka
- 优先权： JPX52-138574 19771117
- 主分类号： C08L23/00
- IPC分类号： C08L23/00 ; C08L33/00 ; C08L33/02 ; C08L63/00 ; C09D133/12 ; G03F7/039 ; G03G5/00 ; H01L21/027 ; B05D3/06
摘要：
1. A resist for use in forming a positive pattern with a radiation comprising a copolymer composed of methyl methacrylate and methacrylic acid and a cross-linking agent having the following general formula: ##STR1## wherein R is H or CH.sub.3, x is an integer of 1 to 9, and y and z are zero, or an integer of 1 to 3.2. A process for forming a positive pattern on a substrate with a radiation.
公开/授权文献
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