发明授权
- 专利标题： Radiation induced deposition of metal on semiconductor surfaces
- 专利标题（中）： 辐射诱导金属在半导体表面上的沉积
-
申请号： US259428申请日： 1981-05-01
-
公开(公告)号： US4359485A公开(公告)日： 1982-11-16
- 发明人: Vincent M. Donnelly , Robert F. Karlicek, Jr.
- 申请人： Vincent M. Donnelly , Robert F. Karlicek, Jr.
- 申请人地址： NJ Murray Hill
- 专利权人： Bell Telephone Laboratories, Incorporated
- 当前专利权人： Bell Telephone Laboratories, Incorporated
- 当前专利权人地址： NJ Murray Hill
- 主分类号： H01L21/285
- IPC分类号： H01L21/285 ; C23C18/14 ; H01L21/268 ; H01L21/288 ; B05D1/18 ; B05D3/06
摘要：
A metal layer is formed on a surface of a Group III-V compound semiconductor by placing the surface in contact with a metal-containing solution and directing laser radiation through the solution. The radiation has a wavelength which is absorbed in the surface, thereby thermally inducing a chemical reaction between the surface and the solution and causing metal from the solution to be deposited on the surface. Specific examples of the deposition of Pt, Au and Zn on InP and GaAs are described.
公开/授权文献
信息查询
IPC分类:
