发明授权
US4406992A Semiconductor pressure transducer or other product employing layers of single crystal silicon 失效
半导体压力传感器或采用单晶硅层的其他产品

Semiconductor pressure transducer or other product employing layers of
single crystal silicon
摘要:
A monocrystalline silicon substrate has formed on a surface a grating pattern manifested by a series of parallel grooves, a layer of dielectric is thermally grown on said surface to replicate said pattern on an opposite surface of said dielectric and a layer of silicon deposited on said opposite surface of said dielectric is single crystal silicon determined by said grating. The structure formed enables the deposited single crystal layer to be selectively treated to provide at least one piezoresistive sensing element to thereby provide a transducer having both the force collector or substrate and the sensing elements of single crystal silicon and dielectrically isolated by means of said dielectric layer.
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