发明授权
- 专利标题: Semiconductor pressure transducer or other product employing layers of single crystal silicon
- 专利标题(中): 半导体压力传感器或采用单晶硅层的其他产品
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申请号: US255461申请日: 1981-04-20
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公开(公告)号: US4406992A公开(公告)日: 1983-09-27
- 发明人: Anthony D. Kurtz , Timothy A. Nunn , Joseph R. Mallon
- 申请人: Anthony D. Kurtz , Timothy A. Nunn , Joseph R. Mallon
- 申请人地址: NJ Ridgefield
- 专利权人: Kulite Semiconductor Products, Inc.
- 当前专利权人: Kulite Semiconductor Products, Inc.
- 当前专利权人地址: NJ Ridgefield
- 主分类号: G01L1/22
- IPC分类号: G01L1/22 ; G01L9/00
摘要:
A monocrystalline silicon substrate has formed on a surface a grating pattern manifested by a series of parallel grooves, a layer of dielectric is thermally grown on said surface to replicate said pattern on an opposite surface of said dielectric and a layer of silicon deposited on said opposite surface of said dielectric is single crystal silicon determined by said grating. The structure formed enables the deposited single crystal layer to be selectively treated to provide at least one piezoresistive sensing element to thereby provide a transducer having both the force collector or substrate and the sensing elements of single crystal silicon and dielectrically isolated by means of said dielectric layer.
公开/授权文献
- US6137276A Onhook telecom power supply regulator mode 公开/授权日:2000-10-24
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