发明授权
- 专利标题: Method of manufacturing photosensors
- 专利标题(中): 制造光电传感器的方法
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申请号: US357076申请日: 1982-03-11
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公开(公告)号: US4412900A公开(公告)日: 1983-11-01
- 发明人: Yasuo Tanaka , Akira Sasano , Toshihisa Tsukada , Yasuharu Shimomoto
- 申请人: Yasuo Tanaka , Akira Sasano , Toshihisa Tsukada , Yasuharu Shimomoto
- 申请人地址: JPX Tokyo
- 专利权人: Hitachi, Ltd.
- 当前专利权人: Hitachi, Ltd.
- 当前专利权人地址: JPX Tokyo
- 优先权: JPX56-35313 19810313; JPX56-16720 19811021
- 主分类号: H01L31/10
- IPC分类号: H01L31/10 ; H01L27/146 ; C23C15/00
摘要:
A method of manufacturing photosensors is disclosed which comprises the steps of forming a photo-conductor film made chiefly of silicon and containing hydrogen on a desired substrate, forming a transparent conductive film on the photo-conductor film by sputtering, and heating the photosensor having the sputtered transparent conductive film at least at 140.degree. C. and not higher than 280.degree. C. The heat treatment is performed preferably at a temperature between 170.degree. to 250.degree. C., at which greater effect will be provided. This heat treatment remarkably improves the photo-response speed.
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