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    METHODS TO DETECT AND LOCATE THE IN-CORE POSITION OF FUEL BUNDLES WITH CLADDING PERFORATIONS IN CANDU-STYLE NUCLEAR REACTORS
    2.
    发明申请
    METHODS TO DETECT AND LOCATE THE IN-CORE POSITION OF FUEL BUNDLES WITH CLADDING PERFORATIONS IN CANDU-STYLE NUCLEAR REACTORS 有权

    公开(公告)号：US20240387065A1

    公开(公告)日：2024-11-21

    申请号：US18780273

    申请日：2024-07-22

    Applicant: Westinghouse Electric Company LLC

    Inventor： Michael D. Heibel ,  Jeffrey L. Arndt

    IPC: G21C17/04 ,  G01T1/24 ,  G21C17/10 ,  H01L31/10 ,  H01L31/115

    Abstract: A method for detecting a leak in a cladding tube in a nuclear reactor is described. The method is well-suited for use in a reactor having a plurality of cladding tubes housed in a plurality of linearly arranged channels for flowing coolant past the cladding tubes. The method includes monitoring the channels for the occurrence of an increase in radiation above a selected base line indicative of the presence of at least one fission product in the coolant in at least one of the plurality of channels, and monitoring the channels for the occurrence of time dependent changes in the strength of radiation in the coolant above the base line along the length of the at least one of the plurality of channels. The leak location is calculated by triangulating the radiation readings from a fixed linear array of detectors positioned adjacent to the channels to determine the location of the strongest radiation reading and the location along the length of the channel where the increase in radiation occurred.

    SOLID-STATE IMAGING DEVICE AND ELECTRONIC APPARATUS
    5.
    发明公开
    SOLID-STATE IMAGING DEVICE AND ELECTRONIC APPARATUS 审中-公开

    公开(公告)号：US20230143614A1

    公开(公告)日：2023-05-11

    申请号：US18049706

    申请日：2022-10-26

    Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION

    Inventor： ITARU OSHIYAMA

    IPC: H01L27/146 ,  H01L31/10

    CPC classification number: H01L27/14621 ,  H01L27/14636 ,  H01L31/10

    Abstract: The present technology relates to a solid-state imaging device and an electronic apparatus capable of improving sensitivity while suppressing deterioration of color mixing. The solid-state imaging device includes: a substrate; a first photoelectric conversion region that is provided in the substrate; a second photoelectric conversion region that is provided in the substrate; a trench that is provided between the first photoelectric conversion region and the second photoelectric conversion region and penetrates through the substrate; a first concave portion region that has a plurality of concave portions provided on a light receiving surface side of the substrate, above the first photoelectric conversion region; and a second concave portion region that has a plurality of concave portions provided on the light receiving surface side of the substrate, above the second photoelectric conversion region. The technology of the present disclosure can be applied to, for example, a backside illumination solid-state imaging device and the like.

    Avalanche photodiode structure
    7.
    发明授权
    Avalanche photodiode structure 有权

    公开(公告)号：US11508868B2

    公开(公告)日：2022-11-22

    申请号：US16613739

    申请日：2018-05-15

    Applicant: ROCKLEY PHOTONICS LIMITED

    Inventor： Guomin Yu

    IPC: H01L31/10 ,  H01L31/107 ,  H01L31/0232 ,  H01L31/028 ,  H01L31/18 ,  H01L29/66

    Abstract: A germanium based avalanche photo-diode device and method of manufacture thereof. The device including: a silicon substrate; a lower doped silicon region, positioned above the substrate; a silicon multiplication region, positioned above the lower doped silicon region; an intermediate doped silicon region, positioned above the silicon multiplication region; an un-doped germanium absorption region, position above the intermediate doped silicon region; an upper doped germanium region, positioned above the un-doped germanium absorption region; and an input silicon waveguide; wherein: the un-doped germanium absorption region and the upper doped germanium region form a germanium waveguide which is coupled to the input waveguide, and the device also includes a first electrode and a second electrode, and the first electrode extends laterally to contact the lower doped silicon region and the second electrode extends laterally to contact the upper doped germanium region.

    Semiconductor device
    8.
    发明授权
    Semiconductor device 有权

    公开(公告)号：US11508856B2

    公开(公告)日：2022-11-22

    申请号：US17187369

    申请日：2021-02-26

    Applicant: KABUSHIKI KAISHA TOSHIBA ,  TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION

    Inventor： Koichi Kokubun ,  Mitsuhiro Sengoku

    IPC: H01L31/02 ,  H01L31/10 ,  H01L31/0256 ,  H01L27/144

    Abstract: A semiconductor device includes a photosensitive element, an insulating region, and a quench element. The photosensitive element includes a first semiconductor region of a first conductivity type, a second semiconductor region of the first conductivity type on the first semiconductor region, a third semiconductor region of a second conductivity type on the second semiconductor region, and a fourth semiconductor region of the second conductivity type around the second and third semiconductor regions. An impurity concentration of the first conductivity type in the second semiconductor region is higher than that in the first semiconductor region. An impurity concentration of the second conductivity type in the fourth semiconductor region is lower than that of the third semiconductor region. The insulating region is around the first and fourth semiconductor regions. The quench element is electrically connected to the third semiconductor region.

    Solid-state imaging device and electronic apparatus
    9.
    发明授权
    Solid-state imaging device and electronic apparatus 有权

    公开(公告)号：US11508768B2

    公开(公告)日：2022-11-22

    申请号：US16959709

    申请日：2018-12-28

    Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION

    Inventor： Itaru Oshiyama

    IPC: H01L27/146 ,  H01L31/10

    Abstract: The present technology relates to a solid-state imaging device and an electronic apparatus capable of improving sensitivity while suppressing deterioration of color mixing. The solid-state imaging device includes a substrate, a first photoelectric conversion region in the substrate, a second photoelectric conversion region in the substrate, a trench between the first photoelectric conversion region and the second photoelectric conversion region and penetrates through the substrate, a first concave portion region that has a plurality of concave portions provided on a light receiving surface side of the substrate, above the first photoelectric conversion regions, and a second concave portion region that has a plurality of concave portions provided on the light receiving surface side of the substrate, above the second photoelectric conversion region. The technology of the present disclosure can be applied to, for example, a backside illumination solid-state imaging device and the like.

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