发明授权
- 专利标题： Method for manufacturing gallium phosphide single crystals
- 专利标题（中）： 制造磷化镓单晶的方法
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申请号： US336701申请日： 1982-01-04
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公开(公告)号： US4431476A公开(公告)日： 1984-02-14
- 发明人: Masayuki Watanabe , Jisaburo Ushizawa , Tsuguo Fukuda
- 申请人： Masayuki Watanabe , Jisaburo Ushizawa , Tsuguo Fukuda
- 申请人地址： JPX Kawasaki
- 专利权人： Tokyo Shibaura Denki Kabushiki Kaisha
- 当前专利权人： Tokyo Shibaura Denki Kabushiki Kaisha
- 当前专利权人地址： JPX Kawasaki
- 优先权： JPX56-4592 19810117; JPX56-141296 19810908
- 主分类号： C01B25/08
- IPC分类号： C01B25/08 ; C30B27/02
摘要：
A gallium phosphide single crystal is prepared from a polycrystalline gallium phosphide powder as a starting raw material which is obtained by hydrogen reduction of gallium phosphate and which contains residual phosphate radicals in an amount of 0.03 to 0.5% by weight. The gallium phosphide powder is compressed to prepare a green compact which is then melted to provide a gallium phosphide liquid. The gallium phosphide liquid is brought into contact with a seed crystal and is pulled.
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