发明授权
- 专利标题： Semiconductor device and a method for manufacturing the same
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US166182申请日： 1980-07-07
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公开(公告)号： US4433004A公开(公告)日： 1984-02-21
- 发明人: Toshio Yonezawa , Masaharu Aoyama
- 申请人： Toshio Yonezawa , Masaharu Aoyama
- 申请人地址： JPX Kawasaki
- 专利权人： Tokyo Shibaura Denki Kabushiki Kaisha
- 当前专利权人： Tokyo Shibaura Denki Kabushiki Kaisha
- 当前专利权人地址： JPX Kawasaki
- 优先权： JPX54-87717 19790711; JPX54-87718 19790711
- 主分类号： H01L21/316
- IPC分类号： H01L21/316 ; H01L23/532 ; H01L21/283 ; H01L21/314
摘要：
A semiconductor device is disclosed which includes a semiconductor substrate; a metal wiring layer comprising an Al alloy formed on the surface of this substrate; and an alumina layer covering this metal layer and containing at least one metal selected from the group consisting of Cu, Mg, Ni, Cr, Mn, Ti and Y. A method for manufacturing such a semiconductor device is also disclosed.
公开/授权文献
- US6022128A Night lamp device 公开/授权日：2000-02-08
信息查询
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