A magnetic bubble memory device includes: a magnetic layer with a first region having an easy axis of magnetization extending in a certain direction and a second region surrounding the first region and having an easy axis of magnetization substantially perpendicular to that of the first region, said first region defining a plurality of bubble propagation patterns; and a replicate gate with a stretch conductor pattern, to which an electric current is applied so as to stretch a bubble between said propagation patterns, and a cutting pattern formed in the second region between the propagation patterns and adapted to lower the bubble collapse field so as to cut the stretched domain. The replicate gate is operated by applying an operating current pulse to the stretch conductor pattern, said operating pulse including a stretch pulse for stretching the bubble and a cut pulse, following the stretch pulse, for cutting the stretched domain.