发明授权
- 专利标题： p-i-n Photodiodes
- 专利标题（中）： p-i-n光电二极管
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申请号： US402921申请日： 1982-07-29
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公开(公告)号： US4443809A公开(公告)日： 1984-04-17
- 发明人: Aland K. Chin , Bulusu V. Dutt
- 申请人： Aland K. Chin , Bulusu V. Dutt
- 申请人地址： NJ Murray Hill
- 专利权人： AT & T Bell Telephone Laboratories, Incorporated
- 当前专利权人： AT & T Bell Telephone Laboratories, Incorporated
- 当前专利权人地址： NJ Murray Hill
- 主分类号： H01L31/0304
- IPC分类号： H01L31/0304 ; H01L31/105 ; H01L29/161
摘要：
Photodiodes (10) are fabricated in a single step diffusion process which exploits the characteristic of certain acceptors to form an anomalous diffusion profile (VI) including shallow and deep fronts (VIa and b) joined by an upwardly concave segment (VIc). By performing this type of diffusion into a low-doped n.sup.- -type body (12) with a carrier concentration (VII) below that of the concave segment, a p.sup.+ -p.sup.- junction (15) is formed at the depth of the concave segment and a p.sup.- -n.sup.- junction (17) is formed at a greater depth. The zone (16) between the junctions is at least partially depleted and forms the active region of a p.sup.+ -p.sup.- -n.sup.- photodiode. Specifically described are InP:Cd photodiodes.
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