发明授权
- 专利标题： Method of producing semiconductor device
- 专利标题（中）： 半导体器件的制造方法
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申请号： US385137申请日： 1982-06-04
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公开(公告)号： US4465529A公开(公告)日： 1984-08-14
- 发明人: Hideaki Arima , Tadashi Nishimura , Masahiro Yoneda , Takaaki Fukumoto , Yoshihiro Hirata
- 申请人： Hideaki Arima , Tadashi Nishimura , Masahiro Yoneda , Takaaki Fukumoto , Yoshihiro Hirata
- 申请人地址： JPX Tokyo
- 专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX56-87799 19810605; JPX56-87800 19810605
- 主分类号： C30B31/18
- IPC分类号： C30B31/18 ; H01L21/223 ; H01L21/225 ; H01L21/263 ; H01L21/268
摘要：
A method for producing an impurity containing semiconductor substrate includes depositing an impurity on selected portions of the substrate by placing a charge on the substrate and converting a gaseous impurity containing atmosphere into a plasma. The impurity may then be diffused into the substrate to a controlled and shallow depth by employing a laser or the like to selectively irradiate the impurity.
公开/授权文献
- US5575714A Method and apparatus to pour fluid around fresh produce 公开/授权日：1996-11-19