发明授权
US4469527A Method of making semiconductor MOSFET device by bombarding with
radiation followed by beam-annealing
失效
通过辐射轰击半导体MOSFET器件进行光束退火的方法
- 专利标题： Method of making semiconductor MOSFET device by bombarding with radiation followed by beam-annealing
- 专利标题（中）： 通过辐射轰击半导体MOSFET器件进行光束退火的方法
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申请号： US326253申请日： 1981-12-01
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公开(公告)号： US4469527A公开(公告)日： 1984-09-04
- 发明人: Takuo Sugano , Ho Q. Vu
- 申请人： Takuo Sugano , Ho Q. Vu
- 申请人地址： JPX Tokyo
- 专利权人： Tokyo University
- 当前专利权人： Tokyo University
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX56-93735 19810619
- 主分类号： H01L21/261
- IPC分类号： H01L21/261 ; H01L21/20 ; H01L21/263 ; H01L21/265 ; H01L21/268 ; H01L21/324 ; H01L21/26
摘要：
A semiconductor substrate is formed by irradiating a semiconductor substrate with radioactive ray so as to generate lattice defects therein for making the entire substrate semi-insulating and then rendering only the surface of the thus irradiated substrate semiconductive, so that a semiconductor device is produced by using the substrate thus formed.
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