公开(公告)号：US06734501B2

公开(公告)日：2004-05-11

申请号：US10058221

申请日：2002-01-29

申请人： Takuo Sugano ,  Toru Toyabe ,  Tatsuro Hanajiri ,  Akira Saito ,  Yoshiro Akagi

发明人： Takuo Sugano ,  Toru Toyabe ,  Tatsuro Hanajiri ,  Akira Saito ,  Yoshiro Akagi

IPC分类号： H01L310392

CPC分类号： H01L29/78696 ,  H01L27/1203 ,  H01L29/458 ,  H01L29/66621 ,  H01L29/66772

摘要： A fully inverted type SOI-MOSFET has a channel region 18 constructed of a portion that belongs to a top silicon layer 13 and is located just under a gate electrode 15 and a source region 16 and a drain region 17, which belong to the top silicon layer 13 and are located adjacent to this channel region 18. The channel region 18 is inverted throughout the entire thickness during operation. The source region 16 has a source resistance RS, which satisfies a relation that (1/gm)>RS with respect to the mutual conductance gm of the channel region 18 itself. According to this fully inverted type SOI-MOSFET, the effective mutual conductance (Gm) can be increased.

摘要翻译： 全反相型SOI-MOSFET具有由属于顶部硅层13的部分构成的沟道区18，该沟道区18位于栅电极15的下方，源极区16和漏极区17属于顶部硅 层13并且位于该通道区域18附近。在操作期间，通道区域18在整个厚度上反转。 源极区域16具有源极电阻RS，其满足关于通道区域18本身的互导体gm的关系（1 / gm）> RS。 根据这种完全反转型的SOI-MOSFET，可以提高有效的互导（Gm）。

公开(公告)号：US4678945A

公开(公告)日：1987-07-07

申请号：US701488

申请日：1985-02-14

申请人： Takuo Sugano ,  Yoichi Okabe ,  Hideharu Miyake ,  Naoki Fukaya

发明人： Takuo Sugano ,  Yoichi Okabe ,  Hideharu Miyake ,  Naoki Fukaya

IPC分类号： H03K19/195

CPC分类号： H03K19/195 ,  Y10S505/858

摘要： A superconducting logic circuit has a first and a second one-junction SQUID's (superconducting quantum interference device) connected by a superconducting inductor, the junction of the second SQUID having a larger critical current than that of the first SQUID, the inductance of the second SQUID being smaller than that of the inductor, and a signal applied to the first SQUID is unidirectionally transmitted to the second SQUID by applying bias currents to the junctions of the two SQUID's.

摘要翻译： 超导逻辑电路具有由超导电感器连接的第一和第二单结SQUID（超导量子干涉装置），第二SQUID的结与第一SQUID的电流相比具有更大的临界电流，第二SQUID的电感 小于电感器的信号，并且施加到第一SQUID的信号通过将偏置电流施加到两个SQUID的结点而单向地传输到第二SQUID。

公开(公告)号：US4469527A

公开(公告)日：1984-09-04

申请号：US326253

申请日：1981-12-01

申请人： Takuo Sugano ,  Ho Q. Vu

发明人： Takuo Sugano ,  Ho Q. Vu

IPC分类号： H01L21/261 ,  H01L21/20 ,  H01L21/263 ,  H01L21/265 ,  H01L21/268 ,  H01L21/324 ,  H01L21/26

CPC分类号： H01L21/268 ,  H01L21/263 ,  H01L21/324 ,  Y10S148/003 ,  Y10S148/097 ,  Y10S148/117

摘要： A semiconductor substrate is formed by irradiating a semiconductor substrate with radioactive ray so as to generate lattice defects therein for making the entire substrate semi-insulating and then rendering only the surface of the thus irradiated substrate semiconductive, so that a semiconductor device is produced by using the substrate thus formed.

摘要翻译： 通过用放射线照射半导体衬底以形成晶格缺陷来形成半导体衬底，以使整个衬底半绝缘，然后仅使这样照射的衬底的表面半导体，从而通过使用半导体器件制造半导体器件 由此形成的基板。

公开(公告)号：US06353330B1

公开(公告)日：2002-03-05

申请号：US09506905

申请日：2000-02-18

申请人： Akinobu Kanda ,  Koji Ishibashi ,  Yoshinobu Aoyagi ,  Takuo Sugano

发明人： Akinobu Kanda ,  Koji Ishibashi ,  Yoshinobu Aoyagi ,  Takuo Sugano

IPC分类号： H03K19195

CPC分类号： B82Y10/00 ,  H01L39/228 ,  Y10S977/937

摘要： A single-flux-quantum digital device includes a first superconducting line extended in a large ring, a second superconducting line connected to the first superconducting line, a superconducting single electron transistor for regulating a supercurrent flowing through the second superconducting line, and a small tunnel junction device for detecting a change in the supercurrent flowing through the first superconducting line. The first superconducting line is extended in a large ring. The second superconducting line divides the large ring into two small rings which are substantially the same in shape and area. The small tunnel junction device is connected to a point where the first and the second superconducting line are joined.

摘要翻译： 单通量量子数字器件包括在大环中延伸的第一超导线，连接到第一超导线的第二超导线，用于调节流过第二超导线的超电流的超导单电子晶体管，以及小隧道 用于检测流过第一超导线路的超级电流的变化。 第一条超导线延伸到一个大环。 第二超导线将大环分成两个在形状和面积上基本相同的小环。 小隧道连接装置连接到第一和第二超导线路连接的点。

公开(公告)号：US4790903A

公开(公告)日：1988-12-13

申请号：US180641

申请日：1988-03-18

申请人： Takuo Sugano ,  Hideharu Miyake

发明人： Takuo Sugano ,  Hideharu Miyake

IPC分类号： C23F4/00 ,  H01L39/24 ,  H01L21/312

CPC分类号： H01L39/2493 ,  C23F4/00 ,  Y10S438/95

摘要： An intermittent etching process for forming efficiently by reactive ion etching (RIE), a minute recess, such as a groove having an opening width as small as about 0.1 .mu.m, with a large aspect ratio in layers of metals, semiconductors, etc. The process comprises alternating RIE steps of brief duration e.g. 30 seconds with vacuumizing for evacuating gaseous reaction products produced in the RIE step from the etched recess. The process is particularly suitable for formation of a bridging portion of Nb, etc. constituting Josephson devices, by making use of three layered resist technique.

摘要翻译： 通过反应离子蚀刻（RIE），具有小于约0.1μm的开口宽度的凹槽的微小凹陷，金属，半导体等层中的纵横比大的间歇蚀刻工艺。 过程包括短暂持续时间的交替RIE步骤，例如 抽真空30秒，以从RIE步骤中产生的气态反应产物从蚀刻的凹槽排出。 该方法特别适用于通过使用三层抗蚀剂技术形成构成约瑟夫逊器件的Nb等的桥接部分。

公开(公告)号：US4015893A

公开(公告)日：1977-04-05

申请号：US607855

申请日：1975-08-25

申请人： Takuo Sugano ,  Yoshifumi Mori

发明人： Takuo Sugano ,  Yoshifumi Mori

IPC分类号： G02B6/122 ,  H01L21/316 ,  H01L33/00 ,  G02B5/14

CPC分类号： H01L21/31679 ,  G02B6/122 ,  H01L21/02241 ,  H01L21/02252 ,  H01L33/00

摘要： An isolation zone for light transmission is formed in a compound semiconductor optical integrated circuit by selective oxidation of a compound semiconductor surface by oxygen plasma.

摘要翻译： 通过氧等离子体选择性氧化化合物半导体表面，在化合物半导体光集成电路中形成用于透光的隔离区。

公开(公告)号：US4352726A

公开(公告)日：1982-10-05

申请号：US201637

申请日：1980-10-28

申请人： Takuo Sugano ,  Eiji Niki ,  Yoichi Okabe ,  Tatsuo Akiyama

发明人： Takuo Sugano ,  Eiji Niki ,  Yoichi Okabe ,  Tatsuo Akiyama

IPC分类号： G01N27/00 ,  G01N27/414 ,  H01L29/78 ,  G01N27/30

CPC分类号： G01N27/414

摘要： An ion selective field-effect sensor selectively sensitive to a particular cation to be measured is disclosed. In the sensor is used a giant heterocyclic compound selectively forming a complex with the particular cation as an ion sensitive film provided on a surface of a field-effect semiconductor device.

摘要翻译： 公开了对要测量的特定阳离子选择性敏感的离子选择性场效应传感器。 在传感器中使用巨型杂环化合物，其选择性地与特定阳离子形成复合物作为设置在场效应半导体器件的表面上的离子敏感膜。

公开(公告)号：US3935328A

公开(公告)日：1976-01-27

申请号：US405733

申请日：1973-10-11

申请人： Takuo Sugano ,  Yoshifumi Mori

发明人： Takuo Sugano ,  Yoshifumi Mori

IPC分类号： H01L21/00 ,  H01L21/316 ,  H01L21/32 ,  H01L21/76 ,  H01L27/00 ,  B05D5/12

CPC分类号： H01L21/00 ,  H01L21/31683 ,  H01L21/32 ,  H01L21/7605 ,  H01L27/00 ,  Y10S148/065 ,  Y10S148/085 ,  Y10S148/117 ,  Y10S148/118

摘要： Method for providing dielectric isolation of an epitaxial layer of a compound semiconductor or for providing separation and protection of pn-junction of a compound semiconductor by applying plasma oxidation.

摘要翻译： 提供化合物半导体的外延层的绝缘隔离或通过施加等离子体氧化来提供化合物半导体的pn结的分离和保护的方法。