发明授权
- 专利标题: Method of making a gallium nitride light-emitting diode
- 专利标题(中): 制造氮化镓发光二极管的方法
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申请号: US480794申请日: 1983-03-31
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公开(公告)号: US4476620A公开(公告)日: 1984-10-16
- 发明人: Yoshimasa Ohki , Yukio Toyoda , Hiroyuki Kobayashi , Isamu Akasaki
- 申请人: Yoshimasa Ohki , Yukio Toyoda , Hiroyuki Kobayashi , Isamu Akasaki
- 申请人地址: JPX Osaka
- 专利权人: Matsushita Electric Industrial Co., Ltd.
- 当前专利权人: Matsushita Electric Industrial Co., Ltd.
- 当前专利权人地址: JPX Osaka
- 优先权: JPX54-135641 19791019; JPX54-54518 19800423
- 主分类号: H01L33/02
- IPC分类号: H01L33/02 ; H01L33/18 ; H01L33/38 ; H01L33/62 ; H01L21/20 ; H01L33/00
摘要:
The substrate of a gallium nitride light-emitting diode is made rough at given positions on the surface thereof, or an insulating film strip pattern is attached on the surface of the substrate prior to growing an n-type conductive gallium nitride layer and a semi-insulating gallium nitride layer thereon. As a result, high conductivity regions are formed in the semi-insulating layer at positions corresponding to the rough surfaces or the insulating film strip pattern in such a manner that each of the high conductivity region extends from the n-type conductive layer to the upper surface of the semi-insulating layer so as to function as a conductor to be connected to an electrode. In the same manner similar high conductive regions are made along kerf portions in a diode wafer, preventing each diode chip from being damaged on cutting.
公开/授权文献
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