发明授权
- 专利标题： Method of reactive ion etching molybdenum and molybdenum silicide
- 专利标题（中）： 反应离子蚀刻钼钼硅化物的方法
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申请号： US584530申请日： 1984-02-28
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公开(公告)号： US4478678A公开(公告)日： 1984-10-23
- 发明人: Tohru Watanabe
- 申请人： Tohru Watanabe
- 申请人地址： JPX Kanagawa
- 专利权人： Tokyo Shibaura Denki Kabushiki Kaisha
- 当前专利权人： Tokyo Shibaura Denki Kabushiki Kaisha
- 当前专利权人地址： JPX Kanagawa
- 优先权： JPX58-36924 19830307
- 主分类号： C23F4/00
- IPC分类号： C23F4/00 ; H01L21/302 ; H01L21/3065 ; H01L21/3213 ; B44C1/22 ; C03C15/00 ; C03C25/06 ; C23F1/02
摘要：
The method of reactive ion etching molybdenum or molybdenum silicide includes the steps of placing a sample to be etched on one of two opposed electrodes in a vacuum chamber, charging an etching gas into the chamber, applying high frequency electrical power to the electrodes to generate a discharge between them, and etching the exposed portion of the sample. The gas is a mixture of chlorine and oxygen, with the oxygen flow rate being less than about 30% of the total flow rate of the mixture.
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