Invention Grant
- Patent Title: Metal ion source
- Patent Title (中): 金属离子源
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Application No.: US412215Application Date: 1982-08-27
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Publication No.: US4488045APublication Date: 1984-12-11
- Inventor: Norimichi Anazawa , Masahiko Okunuki , Ryuzo Aihara
- Applicant: Norimichi Anazawa , Masahiko Okunuki , Ryuzo Aihara
- Applicant Address: JPX Tokyo
- Assignee: JEOL Ltd.
- Current Assignee: JEOL Ltd.
- Current Assignee Address: JPX Tokyo
- Priority: JPX56-139093 19810903
- Main IPC: H01J37/08
- IPC: H01J37/08 ; H01J3/04 ; H01J27/02 ; H01J27/26 ; H01J49/16
Abstract:
A reservoir containing a material to be ionized has in its bottom a capillary extending outwardly in symmetrical with the optical axis of an ion source, and has a needle extending coaxially through said capillary in said reservoir so that the apex end of the needle projects slightly beyond the exterior surface of the reservoir. Intensive electric field at the apex end of the needle is formed by an extracting electrode disposed in facing the needle. An electric current is supplied through conductive wires or filaments supporting the reservoir for heating the reservoir. As a result, the liquid material to be ionized in the reservoir seeps smoothly through the capillary of the reservoir toward the apex end of the needle for field evaporation and ionization.
Public/Granted literature
- US5554872A Semiconductor device and method of increasing device breakdown voltage of semiconductor device Public/Granted day:1996-09-10
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