发明授权
- 专利标题: Stem for semiconductor laser devices
- 专利标题(中): 针对半导体激光器件
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申请号: US583784申请日: 1984-02-29
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公开(公告)号: US4488304A公开(公告)日: 1984-12-11
- 发明人: Hirokazu Shimizu , Kunio Itoh , Masaru Wada , Takashi Sugino , Takako Okabe
- 申请人: Hirokazu Shimizu , Kunio Itoh , Masaru Wada , Takashi Sugino , Takako Okabe
- 申请人地址: JPX Kadoma
- 专利权人: Matsushita Electric Industrial Co., Ltd.
- 当前专利权人: Matsushita Electric Industrial Co., Ltd.
- 当前专利权人地址: JPX Kadoma
- 优先权: JPX55-124843 19800909
- 主分类号: H01S5/00
- IPC分类号: H01S5/00 ; H01S5/02 ; H01S5/022 ; H01S3/04
摘要:
A stem for a semiconductor laser device of a terraced substrate structure which has a tilted active layer against flat parts of the substrate, the stem comprises a base plate and a heat sink block, a flat face of the heat sink block for bonding the semiconductor laser device thereonto is tilted with respect to a base face of the base plate; this stem has features that the polarization direction of the lased light from the semiconductor laser device can be set to be parallel to (or perpendicular to) the base face of the base plate, and therefore it becomes much easier to make adjustments related with the polarization direction of the lased light.
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