发明授权
- 专利标题： Semiconductor device with an ion implanted stabilization layer
- 专利标题（中）： 具有离子注入稳定层的半导体器件
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申请号： US19135申请日： 1979-03-09
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公开(公告)号： US4496963A公开(公告)日： 1985-01-29
- 发明人: James L. Dunkley , Robert C. Dobkin
- 申请人： James L. Dunkley , Robert C. Dobkin
- 申请人地址： CA Santa Clara
- 专利权人： National Semiconductor Corporation
- 当前专利权人： National Semiconductor Corporation
- 当前专利权人地址： CA Santa Clara
- 主分类号： H01L29/10
- IPC分类号： H01L29/10 ; H01L29/808 ; H01L29/80
摘要：
A semiconductor device wherein surface stabilization is provided by a shallow layer of ion implanted doping material on the surface of the semiconductor and beneath the passivating oxide layer. One embodiment is a bipolar transistor including a collector region, a base region and an emitter region, the base region being provided with the shallow ion implanted layer at the surface thereof. Another embodiment is a zener diode device with an anode region and a cathode region, the cathode region being provided with the shallow ion implanted layer at the surface thereof. Another embodiment is a JFET with a gate region and a source and drain region and a channel region extending through the gate region between the source and drain regions, the channel region being provided with the shallow ion implanted layer at the surface thereof.
公开/授权文献
- US5976134A External fixator for repairing fractures 公开/授权日：1999-11-02
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