发明授权
- 专利标题： Silicon photodiode with n-type control layer
- 专利标题（中）： 具有n型控制层的硅光电二极管
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申请号： US603983申请日： 1984-04-26
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公开(公告)号： US4499483A公开(公告)日： 1985-02-12
- 发明人: Tsuneo Yamazaki , Mervat Faltas , Paul P. Webb
- 申请人： Tsuneo Yamazaki , Mervat Faltas , Paul P. Webb
- 申请人地址： CAX Ste-Anne-de-Bellevue
- 专利权人： RCA, Inc.
- 当前专利权人： RCA, Inc.
- 当前专利权人地址： CAX Ste-Anne-de-Bellevue
- 优先权： CAX386011 19810916
- 主分类号： H01L31/105
- IPC分类号： H01L31/105 ; H01L31/18 ; H01L27/14
摘要：
A p-.nu.-n Si photodiode having an n-type control layer extended into the silicon body from a portion of the surface contiguous to that portion from which a p-type region extends. Photodiodes incorporating this control layer have a much higher junction resistance.The invention also includes an improved method of making a photodiode which has a reduced number of processing steps. The improvement comprises implanting As or Sb into the surface of a .nu.-type Si body to form an n-type layer prior to the steps of passivating the surface and forming a p-type region extending into the body from the surface.
公开/授权文献
- US5634353A Air dehumidifier 公开/授权日：1997-06-03
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