发明授权
US4500903A Semiconductor GTO switching device with radially elongated cathode
emitter regions of increasing length
失效
半导体GTO开关器件,具有长度增长的放射状细长的阴极发射极区域
- 专利标题: Semiconductor GTO switching device with radially elongated cathode emitter regions of increasing length
- 专利标题(中): 半导体GTO开关器件,具有长度增长的放射状细长的阴极发射极区域
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申请号: US384520申请日: 1982-06-03
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公开(公告)号: US4500903A公开(公告)日: 1985-02-19
- 发明人: Tsutomu Yatsuo , Takahiro Nagano , Saburo Oikawa , Akira Horie
- 申请人: Tsutomu Yatsuo , Takahiro Nagano , Saburo Oikawa , Akira Horie
- 申请人地址: JPX Tokyo
- 专利权人: Hitachi, Ltd.
- 当前专利权人: Hitachi, Ltd.
- 当前专利权人地址: JPX Tokyo
- 优先权: JPX56-85760 19810605
- 主分类号: H01L29/08
- IPC分类号: H01L29/08 ; H01L29/74 ; H01L29/744
摘要:
A gate turn-off thyristor in which a cathode-emitter layer is divided into a plurality of strip-like regions which are radially arrayed on a major surface of a semiconductor substrate in a coaxial multi-ring pattern including a plurality of coaxially arrayed rings. The cathode-emitter strips belonging to a given one of the rings have some radial length. The cathode-emitter strips belonging to the inner ring of a coaxial multi-ring pattern have a smaller radial length than that of the cathode-emitter strips constituting the outer ring. A cathode electrode is contacted to the cathode-emitter strip in low resistance ohmic contact. A gate electrode is ohmic contacted with a low resistance to a cathode-base layer located adjacent to the cathode-emitter strip so as to enclose it. An anode electrode is ohmic contacted with a low resistance to the anode-emitter layer. With the structure of GTO, turn-off operation of unit GTO's each including a cathode-emitter strip is equalized.
公开/授权文献
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