发明授权
US4514581A Solar cells having ultrathin active layers 失效
具有超薄活性层的太阳能电池

Solar cells having ultrathin active layers
摘要:
Improvements in solar cells based upon low cost semiconductors, such as amorphous silicon, are disclosed. The improved solar cells of this invention have ultrathin active semiconductor layers having a thickness between 0.1 t.sub..alpha. and L.sub.m wherein t.sub..alpha. is the solar spectrum absorption length and L.sub.m is the diffusion length for photogenerated minority charge carriers in the active layer. The back surface reflector has a solar spectrum reflectivity of 70% or greater, so that incident energy not absorbed in a direct pass through the active layer is reflected for another pass. The most preferred embodiment of the cells described herein are shaped to have a light-trapping structure so that light makes mulitple passes through the thin semiconductor layers.
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