发明授权
US4520041A Method for forming metallization structure having flat surface on
semiconductor substrate
失效
在半导体衬底上形成具有平坦表面的金属化结构的方法
- 专利标题： Method for forming metallization structure having flat surface on semiconductor substrate
- 专利标题（中）： 在半导体衬底上形成具有平坦表面的金属化结构的方法
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申请号： US548440申请日： 1983-11-03
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公开(公告)号： US4520041A公开(公告)日： 1985-05-28
- 发明人: Masaharu Aoyama , Masahiro Abe , Takashi Ajima , Toshio Yonezawa
- 申请人： Masaharu Aoyama , Masahiro Abe , Takashi Ajima , Toshio Yonezawa
- 申请人地址： JPX
- 专利权人： Tokyo Shibaura Denki Kabushiki Kaisha
- 当前专利权人： Tokyo Shibaura Denki Kabushiki Kaisha
- 当前专利权人地址： JPX
- 优先权： JPX57-192491 19821104
- 主分类号： H01L21/3205
- IPC分类号： H01L21/3205 ; H01L21/306 ; H01L21/768 ; H01L23/532 ; H01L21/283 ; H01L21/302
摘要：
A metallization structure having a substantially flat surface can be formed on a semiconductor substrate by forming first and second insulating layers on the substrate. The second insulating layer is selectively removed to form grooves therein. Then, a metallic material layer is conformably formed. The metallic layer has grooves corresponding to the grooves of the second insulating layer. A flowable polymer is applied to the surface of the resultant structure to form a layer having a flat surface. The polymer layer and the metallic layer are sequentially ion-etched to expose the second insulating layer. Thus, the metallization structure constituted by the remaining metallic layer and the second insulating layer is formed to have a flat surface.
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