A vertical IGFET device is formed on a substrate which includes a monocrystalline silicon portion at a surface thereof. An apertured insulated gate electrode is disposed on the substrate surface such that an area of monocrystalline silicon is exposed through the aperture. An epitaxial silicon region extends from the substrate surface within the gate electrode aperture and is appropriately doped such that a predetermined voltage applied to the insulated gate electrode forms a channel region in the epitaxial region adjacent thereto. The vertical IGFET is fabricated by a self-aligned technique, wherein the insulated gate electrode includes a first, underlying insulating layer and a second, overlying insulating layer. The second insulating layer protects the gate electrode when the first insulating layer is defined.