发明授权
- 专利标题: Plasma vapor deposition film forming apparatus
- 专利标题(中): 等离子体蒸镀膜形成装置
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申请号: US647607申请日: 1984-09-06
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公开(公告)号: US4539934A公开(公告)日: 1985-09-10
- 发明人: Yasutomo Fujiyama , Shotaro Okabe
- 申请人: Yasutomo Fujiyama , Shotaro Okabe
- 申请人地址: JPX Tokyo
- 专利权人: Canon Kabushiki Kaisha
- 当前专利权人: Canon Kabushiki Kaisha
- 当前专利权人地址: JPX Tokyo
- 优先权: JPX58-168376 19830914
- 主分类号: C23C16/50
- IPC分类号: C23C16/50 ; C23C16/44 ; C23C16/505 ; G03G5/08 ; G03G5/082 ; H01J37/18 ; H01L21/205 ; H01L31/0248 ; C23C13/08
摘要:
In a vapor deposition film forming apparatus having a plurality of reactors each having a substrate and an electrode oppositely arranged in a vacuum chamber and means for applying a voltage thereacross to react or decompose reaction gas introduced into the vacuum chamber, the reactors are arranged on the circumference of a circle and exhaust pipes having substantially equal exhaust resistance radially extend to the reactors from a common exhaust pipe located at the center of the circle.
公开/授权文献
- US5075416A Novel process 公开/授权日:1991-12-24
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