The present invention relates to the inclusion of an additional sense amplifier (100) on each column of a dynamic random access memory (RAM). The second sense amplifier is located near the input/output (DQ) line and functions to increase the rate of discharge of the selected column pair (C.sub.n, C.sub.n) thereby improving the transfer of logic information from a selected memory cell (M) to the input/output line associated therewith. The second sense amplifier in the column of the selected memory cell is activated by the same pulse (CCDQ) which connects the selected column to the input/output line, where only the second sense amplifier associated with the accessed column is activated during a single read/write cycle.