发明授权
- 专利标题： Semiconductor device
- 专利标题（中）： 半导体器件
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申请号： US446669申请日： 1982-12-03
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公开(公告)号： US4546455A公开(公告)日： 1985-10-08
- 发明人: Hiroshi Iwahashi , Kiyofumi Ochii
- 申请人： Hiroshi Iwahashi , Kiyofumi Ochii
- 申请人地址： JPX Kawasaki
- 专利权人： Tokyo Shibaura Denki Kabushiki Kaisha
- 当前专利权人： Tokyo Shibaura Denki Kabushiki Kaisha
- 当前专利权人地址： JPX Kawasaki
- 优先权： JPX56-204245 19811217; JPX56-204246 19811217; JPX57-60534 19820412
- 主分类号： G11C29/00
- IPC分类号： G11C29/00 ; G11C11/40
摘要：
A programming circuit used with a semiconductor memory comprising normal as well as spare memory cells allows any of the normal memory cells to be replaced by a spare memory cell and includes a fuse and a MOSFET connected in series between first and second power supply terminals. A voltage signal at the junction between the fuse and the MOSFET is delivered to the gate of the MOSFET after being delayed after power is supplied.