发明授权
- 专利标题: Method for reducing leakage currents in semiconductor devices
- 专利标题(中): 减少半导体器件漏电流的方法
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申请号: US633675申请日: 1984-07-24
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公开(公告)号: US4551353A公开(公告)日: 1985-11-05
- 发明人: Philip L. Hower , Eric K. Li
- 申请人: Philip L. Hower , Eric K. Li
- 申请人地址: MA Lexington
- 专利权人: Unitrode Corporation
- 当前专利权人: Unitrode Corporation
- 当前专利权人地址: MA Lexington
- 主分类号: H01L21/3105
- IPC分类号: H01L21/3105 ; H01L21/56 ; H01L21/326
摘要:
A method for reducing leakage currents in passivated semiconductor devices includes subjecting the passivation layer to a corona discharge for reducing or eliminating the inversion layer produced by the characteristic passivation layer charge.
公开/授权文献
- US5136267A Tunable bandpass filter system and filtering method 公开/授权日:1992-08-04