发明授权
- 专利标题： Method for fabricating a gallium arsenide semiconductor device
- 专利标题（中）： 砷化镓半导体器件的制造方法
-
申请号： US626563申请日： 1984-06-29
-
公开(公告)号： US4558509A公开(公告)日： 1985-12-17
- 发明人: Sandip Tiwari
- 申请人： Sandip Tiwari
- 申请人地址： NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： NY Armonk
- 主分类号： H01L21/225
- IPC分类号： H01L21/225 ; H01L21/324 ; H01L21/338 ; H01L29/04 ; H01L29/812 ; H01L21/265 ; H01L21/20
摘要：
A method for forming a FET in a gallium arsenide substrate whereby a gate is positioned on a [100] surface of the gallium arsenide substrate in the [011] orientation, active impurities are ion implanted to form FET source and drain regions which are self-aligned with respect to the gate, and the structure is annealed subsequent to the ion implanting whereby the active impurities are caused to diffuse laterally and thereby form channel region beneath the gate.
公开/授权文献
- US5174646A Heat transfer assembly for a fluorescent lamp and fixture 公开/授权日：1992-12-29
信息查询
IPC分类:
