发明授权
- 专利标题： Method for manufacture of insulating film and interface between insulation film and semiconductor
- 专利标题（中）： 绝缘膜的制造方法和绝缘膜与半导体之间的界面
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申请号： US635477申请日： 1984-07-30
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公开(公告)号： US4567061A公开(公告)日： 1986-01-28
- 发明人: Yutaka Hayashi , Iwao Hamaguchi , Kiyohiko Kobayashi
- 申请人： Yutaka Hayashi , Iwao Hamaguchi , Kiyohiko Kobayashi
- 申请人地址： JPX Tokyo JPX Tokyo
- 专利权人： Agency of Industrial Science & Technology,Ministry of International Trade & Industry
- 当前专利权人： Agency of Industrial Science & Technology,Ministry of International Trade & Industry
- 当前专利权人地址： JPX Tokyo JPX Tokyo
- 优先权： JPX54-138923 19791026
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/316
摘要：
An insulation film of improved properties and an interface of similarly improved properties between the insulation film and a semiconductor are produced by heating silicon, a silicon compound or a silicon dioxide film in an atmosphere formed by incorporating a carbon fluorine gas into an oxidative gas.
公开/授权文献
- US5117952A Portable safety bag 公开/授权日：1992-06-02
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