发明授权
- 专利标题： Method of making integrated circuit with reduced narrow-width effect
- 专利标题（中）： 制作集成电路缩小窄幅效果的方法
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申请号： US608606申请日： 1984-05-09
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公开(公告)号： US4569117A公开(公告)日： 1986-02-11
- 发明人: David A. Baglee , Michael C. Smayling , Michael P. Duane , Mamoru Itoh
- 申请人： David A. Baglee , Michael C. Smayling , Michael P. Duane , Mamoru Itoh
- 申请人地址： TX Dallas
- 专利权人： Texas Instruments Incorporated
- 当前专利权人： Texas Instruments Incorporated
- 当前专利权人地址： TX Dallas
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/316 ; H01L21/76 ; H01L21/762 ; H01L29/06 ; H01L21/82
摘要：
A method of making MOS integrated circuits employs high-pressure oxidation of the surface of a silicon slice to create thermal field oxide for device isolation. The implant used prior to this oxidation to provide the channel-stop regions beneath the field oxide may be at a lower dosage, and yet the field-transistor threshold voltage is maintained at a high level. Thus, encroachment of the channel stop impurity into the transistor channel is minimized, and higher density devices are permitted.
公开/授权文献
- US5642531A Method of warming a toilet seat 公开/授权日：1997-07-01
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