发明授权
- 专利标题： Thin film semiconductor device
- 专利标题（中）： 薄膜半导体器件
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申请号： US554656申请日： 1983-11-23
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公开(公告)号： US4578696A公开(公告)日： 1986-03-25
- 发明人: Masakazu Ueno , Takeshige Ichimura
- 申请人： Masakazu Ueno , Takeshige Ichimura
- 申请人地址： JPX Tokyo
- 专利权人： Director-General of Agency of Industrial Science and Technology
- 当前专利权人： Director-General of Agency of Industrial Science and Technology
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX57-205536 19821125
- 主分类号： H01L31/04
- IPC分类号： H01L31/04 ; H01L21/205 ; H01L29/04 ; H01L31/0392 ; H01L31/075 ; H01L31/06
摘要：
A thin film semiconductor device and a method for manufacturing such a device containing a thin film semiconductor layer in which there is no misalignment between a semiconductor layer containing a microcrystalline phase and an adjacent layer having no such phase. A junction region is interposed between the two amorphous semiconductor layers having a microcrystalline phase content which varies gradually from the content of the amorphous semiconductor layer having no microcrystalline phase to that of the layer having a microcrystalline phase. The junction region may be formed by the use of a glow discharge decomposition technique wherein the discharge power is gradually varied.
公开/授权文献
- US5727620A Rim sealed plate-type heat exchanger 公开/授权日：1998-03-17