摘要:
A hybrid integrated circuit device is provided with: a microcomputer, a plurality of peripheral circuit elements, and a non-volatile memory which is positioned adjacent to the microcomputer, all of which are interconnected by a plurality of specified conductive paths; pair of integrated circuit substrates on which is formed the conductive paths and a casing provided with the pair of integrated circuit substrates secured to the upper and lower surfaces of the casing, forming a sealed space between these surfaces. The microcomputer and the peripheral circuit elements are positioned in the sealed space and only the non-volatile memory is positioned in an exposed space. The hybrid integrated circuit device of the present invention has a compact and simple form with a high degree of mounting density as well as superior handling capabilities and reliability.
摘要:
A dust-free garment including: a garment body having garment opening portions opening to the outside; an air passage system, attached to the garment body and having an outlet adapted to communicate to a dust collector for exhausting air therein to the dust collector to filter air; and an air entrance mechanism located in the vicinity of at least one of the garment opening portions and communicated to the air passage system for entering air into the air passage system.
摘要:
A color photosensitive device includes a transparent base plate and a lamination of alternate layers of transparent conductive films and photoelectric conversion layers. The photoelectric conversion layers are sensitive to light of increasing wavelength as the distance from the base plate increases. The photoelectric conversion layers comprise amorphous silicone and the transparent conductive films comprise an oxide of indium, tin, or the like.
摘要:
An image sensor for use in a solid-state facsimile transmitter includes a plurality of photosensors disposed in an array, each photosensor composed of a plurality of series-connected photodiodes; a voltage source; a plurality of switches for selectively applying a reverse bias from the voltage source to the photosensor array, each photosensor in the array being successively reverse biased by a corresponding one of the switches; and an output resistor for detecting current flowing through the selected reverse biased photosensor. The photosensors and switches may each comprise a plurality of series-connected photodiodes provided on a common substrate.
摘要:
The present invention provides a piezoelectric ceramic composition, for producing piezoelectric elements exhibiting high piezoelectric strain constant d33 and high Curie temperature Tc, which composition includes a perovskite PbZrO3 (a), a perovskite PbTiO3 (b), SrO (c), Nb2O5 (d) and ZnO (e), and relative amounts of the components (a), (b), (c) (d) and (e) satisfy the general formula: Pb(ZraTi1-a)O3+bSrO+cNbO2.5+dZnO wherein 0.51≦a≦0.54; 1.1×10−2≦b≦6.0×10−2; 0.9×10−2≦c≦4.25×10−2; 0.1×10−2≦d≦1.25×10−2; and 2.9≦c/d≦15.0.
摘要翻译:本发明提供一种压电陶瓷组合物,其用于制造表现出高压电应变常数d 33和高居里温度Tc的压电元件,该组成包括钙钛矿PbZrO 3(a) ,钙钛矿型PbTiO 3(b),SrO(c),Nb 2 O 5(d)和ZnO(e),以及相对 组分(a),(b),(c)(d)和(e)的量满足通式:<?in-line-formula description =“In-line Formulas”end =“lead”?> Pb (Zr a a 1 a a-a)O 3 + bSrO + cNbO 2.5 + dZnO <βin-line -formulae description =“In-line Formulas”end =“tail”?>其中0.51 <= a <= 0.54; 1.1×10 -2 <= b <= 6.0×10 -2; 0.9×10 -2≤= c <= 4.25×10 -2; 0.1×10 -2 <= d <= 1.25×10 -2; 和2.9 <= c / d <= 15.0。
摘要:
In a position closest to the mounting position of a microcomputer in a casing of a hybrid integrated circuit device on which is mounted the microcomputer and its peripheral circuit elements, an insertion hole is formed for a non-volatile memory which feeds data to the microcomputer. A socket for connecting the non-volatile memory is provided at the bottom of this insertion hole. Because of this configuration it is possible to connect the microcomputer and the non-volatile memory at an extremely short distance and the mounting efficiency of the integrated circuit device is increased. In addition, the non-volatile memory can detachably be mounted. Furthermore, the external shape of the insertion hole for the non-volatile memory is essentially the same as the external shape of the non-volatile memory so that when the non-volatile memory is inserted, the entire surface of this hybrid integrated circuit device is almost flat, providing excellent handling characteristics.
摘要:
A thin film semiconductor device and a method for manufacturing such a device containing a thin film semiconductor layer in which there is no misalignment between a semiconductor layer containing a microcrystalline phase and an adjacent layer having no such phase. A junction region is interposed between the two amorphous semiconductor layers having a microcrystalline phase content which varies gradually from the content of the amorphous semiconductor layer having no microcrystalline phase to that of the layer having a microcrystalline phase. The junction region may be formed by the use of a glow discharge decomposition technique wherein the discharge power is gradually varied.
摘要:
A gradient detecting unit detects the gradient in the output of a driven circuit. An offset voltage generating unit generates an offset voltage in response to an output of a driven circuit as well as the gradient detected by the gradient detecting unit. The gradient in the output of the driven circuit is increased as the change thereof is more abrupt and decreased as the change thereof is more gentle. For example, if the detected gradient is added to the normal offset voltage to form an offset voltage, the offset voltage can follow the changes in the output of the driven circuit to supply a proper supply voltage to the driven circuit.
摘要:
A liquid crystal display employs two transparent substrates between which are positioned the liquid crystal elements for excitation. One substrate includes a linear array of row control electrodes and one set of picture element electrodes and the other includes a linear array of column control electrodes and an opposite set of picture element electrodes. On each substrate, each picture element electrode is connected to a control electrode by way of a pair of single-stage diodes connected in parallel but oppositely poled.